A 240 $\times$ 160 single-photon avalanche diode (SPAD) sensor integrated with a 3D-stacked 65nm/65nm CMOS technology is reported for direct time-of-flight (dToF) 3D imaging in mobile devices. The top tier is occupied by backside illuminated SPADs with 16 $\mu {\mathrm{ m}}$ pitch and 49. 7% fill-factor. https://www.spidertattooz.com/